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| AP4525GEM Pb Free Plating Product Advanced Power Electronics Corp. Simple Drive Requirement Low On-resistance Fast Switching Performance RoHS Compliant SO-8 S1 G1 D2 D1 D1 D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) G2 S2 40V 28m 6A -40V 42m -5A ID P-CH BVDSS RDS(ON) ID Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design,low on-resistance and costeffectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. D1 G1 G2 D2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 40 16 6.0 5.0 30 2.0 0.016 -55 to 150 -55 to 150 P-channel -40 16 -5.0 -4.0 -30 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit /W Data and specifications subject to change without notice 200725064-1/7 AP4525GEM N-CH Electrical Characteristics@ Tj=25 C(unless otherwise specified) Symbol BVDSS BVDSS/Tj o Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA Min. 40 1 - Typ. 0.04 6 8 1.5 4 7 20 20 4 580 100 70 2 Max. Units 28 32 3 1 25 30 13 930 3 V V/ m m V S uA uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS=10V, ID=6A VGS=4.5V, ID=4A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70oC) o VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=40V, VGS=0V VDS=32V, VGS=0V VGS=16V ID=6A VDS=20V VGS=4.5V VDS=20V ID=6A RG=3,VGS=10V RD=3.3 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=1.1A, VGS=0V IS=6A, VGS=0V dI/dt=100A/s Min. - Typ. 20 12 Max. Units 1.8 V ns nC Reverse Recovery Time Reverse Recovery Charge 2/7 AP4525GEM P-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS BVDSS/Tj o Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T j=25 C) Drain-Source Leakage Current (T j=70 C) o o Test Conditions VGS=0V, ID=-250uA 2 Min. -40 -0.8 - Typ. -0.02 5 9 2 5 8.5 15 27 25 770 165 115 6 Max. Units 42 60 -2.5 -1 -25 30 24 1230 9 V V/ m m V S uA uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25,ID=-1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg VGS=-10V, ID=-5A VGS=-4.5V, ID=-3A VDS=VGS, ID=-250uA VDS=-10V, ID=-5A VDS=-40V, VGS=0V VDS=-32V, VGS=0V VGS=16V ID=-5A VDS=-20V VGS=-4.5V VDS=-20V ID=-5A RG=3,VGS=-10V RD=4 VGS=0V VDS=-20V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=-1.1A, VGS=0V IS=-5A, VGS=0V dI/dt=-100A/s Min. - Typ. 20 16 Max. Units -1.8 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 135/W when mounted on min. copper pad. 3/7 AP4525GEM N-Channel 30 30 T A = 25 o C ID , Drain Current (A) 20 ID , Drain Current (A) 10V 7.0V 5.0V 4.5V V G =3.0V T A = 150 o C 10V 7.0V 5.0V 4.5V V G =3.0V 20 10 10 0 0 1 2 3 0 0 1 2 3 4 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 120 ID=4A 100 T A =25 o C Normalized RDS(ON) ID=6A V G =10V 1.6 RDS(ON) (m ) 80 60 1.2 40 20 2 4 6 8 10 0.8 25 50 75 100 125 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 10 8 Normalized VGS(th) (V) 1.2 IS(A) 6 T j =150 o C 4 T j =25 o C 0.8 2 0 0 0.2 0.4 0.6 0.8 1 1.2 0.4 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 4/7 AP4525GEM N-Channel f=1.0MHz 12 1000 VGS , Gate to Source Voltage (V) I D =6A V DS =20V 8 C iss C (pF) 100 C oss C rss 4 0 0 5 10 15 20 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) Duty factor=0.5 10 100us ID (A) 1ms 1 0.2 0.1 0.1 0.05 10ms 100ms 0.1 PDM t 0.02 T A =25 o C Single Pulse T 0.01 1s DC Duty factor = t/T Peak Tj = PDM x Rthja + Ta Single Pulse Rthja =135o C/W 0.01 0.1 1 10 100 0.01 0.001 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 50 VG 40 V DS =5V T j =25 o C T j =150 o C ID , Drain Current (A) QG 4.5V QGS QGD 30 20 10 Charge 0 0 2 4 6 Q V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 5/7 AP4525GEM P-Channel 30 30 T A = 25 o C -ID , Drain Current (A) -10V -7.0V -5.0V -4.5V -ID , Drain Current (A) 20 T A = 150 C o -10V -7.0V -5.0V -4.5V 20 V G = - 3.0V V G = - 3.0V 10 10 0 0 1 2 3 4 5 0 0 1 2 3 4 5 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 120 1.6 I D = -3 A RDS(ON) (m) T A = 25 o C Normalized RDS(ON) 90 1.4 I D = -5A V G = -10V 1.2 60 1.0 30 2 4 6 8 10 0.8 25 50 75 100 125 150 -V GS ,Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 10 8 Normalized -VGS(th) (V) 1.2 1.2 6 -IS(A) T j =150 o C 4 T j =25 o C 0.8 2 0 0 0.2 0.4 0.6 0.8 1 0.4 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 6/7 AP4525GEM P-Channel 12 10000 f=1.0MHz -VGS , Gate to Source Voltage (V) I D = -5 A V DS = - 2 0 V 8 1000 C iss C (pF) 4 100 C oss C rss 0 0 4 8 12 16 20 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) Duty factor=0.5 10 100us 1ms 0.2 -ID (A) 0.1 1 10ms 100ms 0.1 0.05 PDM t 0.02 0.1 T c =25 o C Single Pulse 1s DC T Duty factor = t/T Peak Tj = PDM x Rthja + T a Single Pulse 0.01 Rthja=135 oC/W 0.01 0.1 1 10 100 0.01 0.001 0.01 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 30 V DS = -5V -ID , Drain Current (A) T j =25 C o T j =150 C o VG QG 20 -4.5V QGS 10 QGD Charge 0 0 2 4 6 Q -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 7/7 |
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